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(R)
CLP200M
OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
Application Specific Discretes A.S.D.
MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : Analog and ISDN line cards PABX Main Distribution Frames Primary protection modules
s s s s
DESCRIPTION The CLP200M is designed to protect telecommunication equipment. It provides both a transient overvoltage protection and an overcurrent protection. It is housed in a PowerSO-10TM package. FEATURES Dual bidirectional protection device. High peak pulse current : ipp = 100a (10/1000 s surge) Max. voltage at switching-on : 290v Min. current at switching-off : 150ma Failure status output pin
s s s s s
PowerSO-10TM SCHEMATIC DIAGRAM
FS TIP S
1
BENEFITS Both primary and secondary protection levels in one device. Voltage and current controlled suppression. Surface Mounting with PowerSO-10TM package. Line card cost reduction thanks to the very low power rating of external components required : balanced resistors, ring relay, low voltage SLIC protection
s s s s
bs O
let o
od Pr e
ct u
(s)
Ob -
so
TIP L TIP L TIP L
te le
ro P
uc d
s) t(
NC RING S RING L RING L RING L
TAB is connected to GND
July 2003- Ed : 4B
1/21
CLP200M
COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K20 VDE0433 VDE0878 IEC61000-4-5 FCC Part 68 BELLCORE TR-NWT-001089 Peak Surge Voltage (V) 6000 6000 4000 6000 4000 1500 800 2500 1000 Voltage Waveform (s) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 2/10 10/1000 Current Waveform (s) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 2/10 10/1000 Admissible Ipp (A) 150 150 100 150 100 200 100 500 100 Necessary Resistor () -
BLOCK DIAGRAM
TIPL TIPS
Overcurrent detector
OR SW3 FS SW4 SW2 OR SW1
Overvoltage detector
bs O
let o
Pr e
Pin 1 2
du o
RINGL
(s) ct
Ob -
so
te le
Overvoltage reference (+/- 215 V)
ro P
uc d
GND
s) t(
Overvoltage detector
Overvoltage reference (+/- 215 V)
Overcurrent detector
RINGS
Symbol FS TIPS TIPL RINGL RINGS NC GND
Description Failure Status TIP (SLIC side) TIP (Line side) RING (Line side) RING (SLIC side) Not connected Ground
3/4/5 6/7/8 9 10 TAB
2/21
CLP200M
APPLICATION NOTE 1. INTRODUCTION The aim of this section is to show the behavior of our new telecom line protection device. This device includes a primary protection level and is suitable for main distribution frames and line cardsThis protection concept is explained and, in addition, the CLP200M performances are analysed when facing different surges as described in the CCITT recommendations. Fig. 1 : Subscriber line protection topology 2. STMicroelectronics CLP200M CONCEPT 2.1 Evolution of the SLIC protection Over the years, the silicon protection performances have considerably changed. The first generation of products like SMTHBTxx and SMTHDTxx offered fixed overvoltage protection against surges on either TIP or RING line in four packages. The following generation like THBTxx and THDTxx still offered fixed overvoltage protection against surges on both TIP and RING lines in two packages. The next step was the introduction of the LCP1511D which brought the advantage of full programmable voltage. Today, the CLP200M combines the features of all the previous generations. In addition to that, it offers an overcurrent detection when operating in speech mode and also a Failure Status output signal.
"PRIMARY PROTECTION"
"SECONDARY PROTECTION"
telecommunication
CLP200M SLIC
line
MDF EXCHANGE
LINE CARD
"SECONDARY PROTECTION"
telecommunication
CLP200M
line
THDTxx or LPC1511D or LB200B
SLIC
Fig. 2 : Line card protection
MDF EXCHANGE
LINE CARD
bs O
Figure 1 is a simplified block diagram of a subscriber line protection that is mainly used so far. This shows two different things : A "primary protection" located on the Main Distribution Frame (MDF) eliminates coarsely the high energy environmental disturbances (lightning transients and AC power mains disturbances) A "secondary protection" located on the line card includes a primary protection level (first stage) and a residual protection (second stage) which eliminates finely the remaining transients that have not been totally suppressed by the first stage. The CLP200M can be used both in MDFs and in line cards. In that case, any line card may be swapped from one MDF to another one without reducing the efficiency of the whole system protection. The CCITT requirements are different for these two protection locations (MDFs and line cards). Concerning the "primary protection", the CCITT requires a 4kV, 10/700s surge test whereas the "secondary protection" has to withstand a 1kV, 10/700s surge test. The explanations which follow are basically covering the line card application.
s s
let o
Pr e
du o
ct
(s)
Ob -
Programmable thanks to any external voltage reference
so
te le
ro P
I
uc d
s) t(
Programmable thanks to an external resistor
+ I SWON
V
- I SWON
Line card operating conditions
The figure 2 summarizes the performance of the CLP200M which basically holds the SLIC inside its correct voltage and current values.
3/21
CLP200M
APPLICATION CIRCUIT : CLP200M in line card Fig. 3 : CLP200M in line card
I Fuse TIP R sense
TIPL
TIPS
1
-Vbat
Rp Overcurrent detector 2 Overvoltage detector Overvoltage reference (+/- 215 V) External voltage reference
TIP
-Vbat
OR SW3 SW1
(*)
SLIC
FS SW4 SW2 OR Overvoltage detector Overvoltage reference (+/- 215 V)
GND Rp
1
RING
2 Overcurrent detector Ring Generator
RINGL
RINGS
RING Fuse
R sense
(*) LCP1511D or THDT series
s
bs O
Figure 3 above shows the topology of a protected analog subscriber line at the exchange side. The CLP200M is connected to the ring relay via two balanced Rp resistors, and to the Subscriber Line Interface Circuit. A second device is located near the SLIC : it can be either a LCP1511D or a THDT series. These two devices are complementary and their functions are explained below : The first stage based on CLP200M manages the high power issued from the external surges. When used in ringing mode, the CLP200M operates in voltage mode and provides a symmetrical and bidirectional overvoltage protection at +/-215 V on both TIP and RING lines. When used in speech mode, the CLP200M operates in current mode and the activation current of the CLP200M is adjusted by RSENSE.
let o
Pr e
du o
(s) ct
so Ob -
The second stage is the external voltage reference device which defines the firing threshold voltage during the speech mode and also assumes a residual power overvoltage suppression. This protection stage can be either a fixed or programmable breakover device. The THDTxx family acts as a fixed breakover device while the LCP1511D operates as a programmable protection. Thanks to this topology, the surge current in the line is reduced after the CLP200M. Because the remaining surge energy is low, the power ratings of Rp, the ring relay contacts and the external voltage reference circuit may be downsized. This results in a significant cost reduction.
s
te le
ro P
uc d
s) t(
4/21
CLP200M
2.3 Ringing mode Fig. 4 : Switching by voltage during ringing mode.
Fuse TIP
ILG
R sense
ILG
A1
TIPL TIPS 1/2 CLP200M Rp Overcurrent detector 2 Overvoltage detector 1
2 1
-215 +215
VLG
Overvoltage reference (+/- 215 V)
VLG
OR SW3 SW1 FS
3
GND
In ringing mode (Ring relay in position 2), the only protection device involved is the CLP200M. In normal conditions, the CLP200M operates in region 1 of A1 curve, and is idle. If an overvoltage occuring between TIP (or RING) and GND reaches the internal overvoltage refe-rence (+/- 215V), the CLP200M acts and the line is short-circuited to GND. At this time the operating point moves to region 2 for positive surges (region 3 for negative surges). Once the surge current disappears, the device returns to its initial state (region 1). Fig. 5a : Method to adjust the reference voltage.
Fuse TIP
For surges occuring between TIP and RING, the CLP200M acts in the same way. This means that the CLP200M ensures a tripolar protection. When used alone, the CLP200M acts at the internal overvoltage reference level (+/- 215V). Furthermore, it is possible to adjust this threshold level to a lower voltage by using : up to 4 fixed external voltage reference (VZ1 to VZ4) (see fig.5a).
.
R sense
TIPL
O
bs
let o
ro P e
FS
du
OR
(s) ct
so Ob -
te le
ro P
uc d
s) t(
1
Rp
TIPS VZ1
2
Overcurrent detector
Overvoltage detector
SW3 SW1
Overvoltage reference (+/- 215 V)
VZ2
GND SW4 SW2 OR Overvoltage detector Overvoltage reference (+/- 215 V)
VZ3
Overcurrent detector VZ4 RINGL RINGS 1
RING Fuse
R sense
Rp
2
5/21
CLP200M
external reference supplies, Vb1 and Vb2 (see fig.5b).. Fig. 5b : Method to adjust the reference voltage.
s
1 Fuse TIP R sense Rp
TIPL
TIPS
2
Overcurrent detector VB1 Overvoltage reference (+/- 215 V)
OR SW3 SW1
Overvoltage detector
FS SW4 SW2 OR Overvoltage detector Overvoltage reference (+/- 215 V)
GND
VB2 Overcurrent detector
RINGL
RINGS
RING Fuse
R sense
2.4 Speech mode
Fig. 6 : Switching by current during speech mode.
Fuse TIP
ILG
R sense
TIPL
TIPS
Overcurrent detector
SW3 SW1
FS
bs O
In speech mode (Ring relay in position 1), the protection is provided by the combination of both CLP200M and the external voltage reference device. In normal conditions, the working point of this circuit is located in region 4 of A2 curve : the CLP200M is idle. When a surge occurs on the line, the external voltage reference device clamps at GND or -Vbat respectively for positive and negative surges. This generates a current which is detected by RSENSE and causes the protection to act : the line is short-circuited to GND.
let o
Pr e
OR
od
Overvoltage detector
uc
(s) t
VLG
GND
so Ob 1 2 External voltage reference
eP let
ro
uc d
1 Rp 2
s) t(
ILG A2
5 4
Rp
-Vbat
-VREF2
Overvoltage reference (+/- 215 V)
VREF1
6
VLG
The operating point moves to region 5 for positive surges or region 6 for negative surges. Once the surge current falls below the switching-off current ISWOFF, the CLP200M returns to its initial state (region 4). Furthermore, the CLP200M switches when an overvoltage, either positive or negative, occurs either : simultaneously on both TIP and RING lines versus GND. between TIP and RING. on TIP (or RING) versus GND.
s s s
6/21
CLP200M
Fig. 7a and 7b RSENSE.
ISWON (mA) 500
-20C 25C 75C
: Switching-on current versus
2.5 . Failure Status The CLP200M has an internal feature that allows the user to get a Failure Status (FS) indication. When the CLP200M is short-circuiting the line to GND, a signal can be managed through pin 1. This signal can be used to turn a LED on in order to provide a surge indication. It may also be used with a logic circuitry to count the number of disturbances appearing on the lines. Fig. 8 : Failure Status circuit and diagnostic.
300 200
100
Rsense
3 5 7 Rsense () 9 11 13
1 FAILURE CLP200M
1k
Iswon @ 25C (mA) 500
Iswon min negative Iswon max negative Iswon min positive Iswon min positive
STATUS
300
Rsense +12V
200
100 3 5 7 Rsense () 9 11
If a surge exceeding the maximum ratings of the CLP200M occurs on the line, the device will fail in a short-circuit state.
The choice of the switching-on current is function of the RSENSE resistors. In normal operating condition, only the negative current of the signal is of interest. This current (typically below -150 mA) should not activate the protection device CLP200M. Therefore the level of activation is to be chosen just above this limit (typically -200 mA). This level is adjusted through RSENSE. Figures 7a and 7b enable the designers to choose the right RSENSE value.
bs O
let o
Pr e
du o
(s) ct
so Ob Ipp (A) 1000 100
Fig. 9 : Operation limits and destruction zone of the CLP200M.
te le
ro P
uc d
s) t(
10 0.01
0.1 t (ms)
1
10
EXAMPLE : The choice of RSENSE = 4 ensures a negative triggering of -220 mA min and -320 mA max. In this case, the positive triggering will be 180mA min and 280 mA max.
s
s
The figure 9 shows two different curves : The lower one indicates the maximum guaranted working limits of the CLP200M. The upper curve shows the limit above which the CLP200M is completely destructed . In this case, the Fail Diagnostic pin is on.
7/21
CLP200M
3. CLP200M TESTS RESULTS ACCORDING TO CCITT K20 RECOMMENDATIONS 3.1 CCITT K20 Recommendations In respect with the CCITT recommendations, the CLP200M has to withstand three kinds of disturbances. 3.1.1. Lightning simulation (Test 2, table 2/K20) This test shall be done in transversal and longitudinal modes as shown in figure 10. Fig. 10 : Transversal and longitudinal test topologies. 3.1.3. Power contact (Test 3, table 1/K20) This test shall be done with the test circuit of figure 12. Vac(max) = 220VRMS , with switch S in each position and duration 15 min. Fig. 12 : Power contact test circuit. Fig. 11 : Power induction test circuit.
1F
R1 A
100
S2 S1 R2
ITEM UNDER TEST
BE 1F
15
25
A or B ITEM UNDER
B or A
4kv
20F
50
0.2F
TEST
E
TRANSVERSAL TEST
25
15
<10
A ITEM
UNDER
25
B
TEST
4kv
20F
50
0.2F
E
LONGITUDINAL TEST
The test generator is the 10/700s with 4kV of peak voltage. 3.1.2. Power induction (Test 3a and 3b, table 2/K20)
bs O
s
Two kinds of tests using the same circuit topology (see fig.11) are defined in the CCITT K20. Test 3a : Vac(max) = 300VRMS, R1 = R2 = 600 S2 operating and test duration = 200 ms.
s
let o
Pr e
du o
(s) ct
so Ob -
te le
600
ro P
uc d
s) t(
A ITEM
UNDER <10 600 B TEST E
3.1.4. Acceptance criteria and number of tests For the tests described in chapter 3.1.1., 3.1.2. and 3.1.3. two criteria are defined : A: Equipment shall withstand the test without damage and shall operate properly within the specified limits. B: A fire hazard should not occur in the equipment as a result of the tests. The criteria are affected to the different tests as mentioned in the table 1.
Test 3b : Vac(max) = 300VRMS (*), R1 = R2 = 200 S2 operating and test duration not defined.
(*) Recommended value.
8/21
CLP200M
Table 1 : Acceptance criteria and number of tests. TEST ACCEPTANCE CRITERIA 2 A NUMBER TO TESTS 10 for longitudinal A 10 for longitudinal B and 10 for transversal 5 1 1 for each position of s Figures 14 and 15 show that the remaining overvoltage does not exceed +/- 260 V. The CLP200M switches on within 0.7 s and withstands the 100 A given by the CCITT K20 generator. Consequently, the CLP200M totally fulfills this test. 3.2.2 Power induction (Test 3a and 3b table 2/K20) Fig. 15 : CLP200M response to a negative surge.
3a 3b 3
A B B
3.2. Ringing mode 3.2.1. Lightning simulation test Lightning phenomena are the most common surge causes. The purpose of this test is to check the robustness of the CLP200M against these lightning strikes.
Fig. 13 : Lightning simulation test.
4 Rsense TIPL 1/2 CLP200M GND TIPS V Rp
I 10/700s GENERATOR +/- 4kV
Fig. 14 : CLP200M response to a positive surge.
O
bs
let o
Pr e
du o
(s) ct
so Ob -
Surges of long duration with medium voltage value are mainly produced by the proximity of a subscriber line with an AC mains line or equipment. The purpose of this test is to check the robustness of the CLP200M against these capacitive coupling disturbances.
te le
ro P
uc d
s) t(
Fig. 16 : Power inductance test.
TEST 3a 3b
V(RMS) 300 300
R() 600 200
Duration 0.2s ?
9/21
CLP200M
Fig. 17 : CLP200M response to the induction test (Test 3a). The test 3 of CCITT K20 requires a serial PTC (or fuse) which is inserted in the test circuit to limit the current rate. This PTC acts like an open-circuit in a non-instantaneous way when a surge occurs on the line. Meanwhile, the CLP200M has to withstand the surge. Fig. 19 : Power contact test.
I 4 Rsense PTC 15min V(RMS) 50Hz TIPL TIPS 1/2 CLP200M GND V Rp
600 or < 10
Fig. 20 : Power contact test 3 (With 10 series).
Fig. 18 : CLP200M reponse to the induction test (Test 3b).
O
Figures 17 and 18 show that the remaining voltage does not exceed 270 V. Consequently, the CLP200M totally fulfills this test. The test duration is not specified in test 3b. If the duration exceeds 5s we do suggest to follow the soldering and mounting recommendations given on page 17 of this document.
bs
let o
Pr e
du o
(s) ct
so Ob -
te le
ro P
uc d
s) t(
Figure 20 shows that the remaining overvoltage does not exceed 250 V and shows that the PTC acts like an open-circuit after 60 ms. Consequently, the CLP200M totally fulfills this test. 3.3. Speech mode 3.3.1. Lightning simulation test (Test 2, table 2/K20) Fig. 21: Lightning test in speech mode.
I1 10/700s 4
3.2.3 Power contact (Test 3 table 1/K20) This long duration surge is produced when connecting a subscriber line to an AC mains line or equipment. The purpose of this test is to check the robustness of the CLP200M against these disturbances.
10/21
GENERATOR +/- 4kV
Rsense
TIPL 1/2 CLP200M GND TIPS
50 Rp
I2 SLIC
-48V
V1 LCP1511D
V2
CLP200M
Fig. 22 : CLP200M response to a positive surge. 3.3.2 Power induction test (Test 3a and 3b, table 2/K20) Fig. 24 : Power induction test.
I1
4
Rsense
50 Rp
I2 SLIC
TIPL V(RMS) 50 Hz 1/2 CLP200M GND
TIPS -48V V1 LCP1511D V2
TEST 3a
V(RMS) 300
R() 600
Duration 0.2s
Fig. 23 : CLP200 M response to a negative surge.
Figures 25 and 26 show that the maximum remaining voltage does not exceed +2V for positive surges and -55V for negative surges. Consequently, the CLP200M totally fulfills this test. The test duration is not specified in test 3b. If the duration exceeds 5s we do suggest to follow the soldering and mounting recommendations given on page 17 of this document.
Fig. 25 : Induction test behavior (Test 3a).
bs O
Figures 22 and 23 give the voltage and current behavior during positive and negative 4kV, 10/700s, surge tests using a LCP1511D as second stage protection device. The firing threshold values are now adjusted to GND and to -Vbat (-48V) by the action of the second stage protection which acts as an external voltage reference.
let o
Pr e
du o
(s) ct
so Ob -
te le
ro P
uc d
s) t(
As shown on these figures, the maximum remaining voltage does not exceed +2.5V for positive surges and -60V for negative surges. Consequently, the CLP200M totally fulfills this test.
11/21
CLP200M
Fig. 26 : Induction test behavior (Test 3b). Fig. 28 : Power contact test 3 (with R (R) 10 series).
3.3.3 - Power contact test (Test 3 table 1/K20) The test 3 of CCITT K20 requires a serial PTC (or fuse) which is inserted in the test circuit to limit the current rate. This PTC acts like an open-circuit after 60 ms when a surge occurs on the line. Meanwhile, the CLP200M has to withstand the surge. The protection device CLP200M totally fulfills this test. Fig. 27 : Power contact test.
I
600 or < 10
PTC
4
15min
V(RMS) 50Hz
bs O
let o
Pr e
Rsense TIPL GND
TIPS
1/2 CLP200M
du o
Rp
(s) ct
I2
-48V LCP1511D
so Ob -
te le
ro P
uc d
s) t(
SLIC
V
V2
12/21
CLP200M
ABSOLUTE MAXIMUM RATINGS (RSENSE = 4 , and Tamb = 25 C) Symbol IPP Parameter Line to GND peak surge current Test Conditions 10/1000s (open circuit voltage wave shape 10/1000s) 5/310s (open circuit voltage wave shape 10/700s) ITSM Mains power induction current Mains power contact current VRMS = 300V, R = 600 t = 200ms VRMS = 220V, R = 10 (failure status threshold) t = 200 ms VRMS = 220V, R = 600 t = 15 mn Tstg Tj TL Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s Value 100 150 0.5 22 Unit A A A A
0.30 - 40 to + 150 150 260
A C C
ELECTRICAL CHARACTERISTICS (RSENSE = 4 , and Tamb = 25C) Symbol ILGL Parameter Line to GND leakage current Overvoltage internal reference Test Conditions
. VLG = 200 V . Measured between TIP (or RING) and GND
Vref
VSWON ISWOFF ISWON C
Line to GND voltage at SW1 or SW2 switching-on Line to GND current at SW1 or SW2 switching-off Line current at SW1 or SW2 switching-on Line to GND capacitance
bs O
let o
Pr e
du o
(s) ct
. ILG = 1 mA . Measured between TIP (or RING) and GND . Measured at 50 Hz between TIPL (or RINGL) and GND . Refer to test circuit page 14 . Positive pulse . Negative pulse
Ob -
so
te le
ro P
uc d
Value
s) t(
Min.
Max. 10
Unit A
215
V
290 150 180 220 280 320 200
V mA mA pF
. VLG = -1 V + 1VRMS . F = 1 MHz
13/21
CLP200M
TEST CIRCUIT FOR ISWOFF PARAMETER : GO-NO GO TEST
R - VP D.U.T. VBAT = - 48 V Surge generator
This is a GO-NO GO test which allows to confirm the switch-off (ISWOFF) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the ISWOFF value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 10A, 10/1000s. - The D.U.T. will come back to the OFF-state within a duration of 50ms max. Fig. 29 : Typical variation of switching-on current (positive or negative) versus RSENSE resistor and junction temperature (see test condition Fig 31).
ISWON (mA) 500
-20C 25C 75C
Fig. 30 : Variation of switching-on current versus RSENSE at 25C.
Iswon @ 25C (mA) 500
300 200
100 3 5 7 Rsense ()
O
Fig. 31 : ISWON MEASUREMENT - Iswon = I1 when the CLP200M switches on (I1 is progressively increased using R) - Both TIP and RING sides of the CLP200M are checked - RL = 10 .
bs
let o
RL
od Pr e
R sense
ct u
9 11
(s)
13
so Ob 300 200 100 3
te le
ro P
Iswon min negative
uc d
Iswon min positive
s) t(
Iswon min positive
Iswon max negative
5 7 Rsense ()
9
11
Fig. 32 : Relative variation of switching-off current versus junction temperature for RSENSE between 3 and 10 .
ISWOFF [TjC] / ISWOFF [25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40
I1
48 V
TIPL
TIPS R
DUT
GND
RINGL RINGS
-20
0
20 40 Tj (C)
60
80
14/21
CLP200M
Fig. 33 : Relative variation of switching-off current versus RSENSE (between 3 and 10 ).
ISWOFF [Rsense] / ISWOFF [4 ] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 4 6 8 Rsense () 10
-48V
Fig. 34 : Residual current l1 after the CLP200M. The residual current l1 is defined by its peak value (IP) and its duration () @ IP/2 . Current surge input waveform(s) IPP(A) 5/310 positive surge 130A negative surge Residual current after the CLP200M Peak cur- waveform t(s) rent IP (A) 4.2 1.1 1 0.5
R sense R = 50 Ohms
SURGE GENERATOR
TIPL
TIPS GND RINGS
I1
DUT
RINGL
Fig. 35 : Relative variation of switching-on voltage versus dV/dt with an external resistor of 4 .
VSWON / VREF
1.12 1.10
1.08 1.06
Fig. 36 : Relative variation of internal reference voltage versus junction temperature (ILG=1mA).
VREF [TjC] / V REF [25C]
1.04 1.02 1.00 0.98 0.1
0.3
1
bs O
let o
ro P e
3 10
du
30
ct
(s)
300
so Ob 1.10 1.05
te le
ro P
uc d
s) t(
1.00
0.95 0.90 0.85 -40 -20 0 20 40 60
100
1000
dV/dt (V/s)
Tj (C)
15/21
CLP200M
Fig. 37 : Junction capacitance (TIPL/GND) versus applied voltage
C (pF) 220 200 180 160 140 120 100 80 60 40
Fig. 38 : Typical and maximal capacitance between TIPL, RINGL and GND. V TIPL = - 48 V V RINGL # 0 V V GND = 0 V Capacitance Capacitance Capacitance between between between RINGL and TIPL and TIPL and GND GND RINGL Typ. 195 62 57
0
10
20
30 VR (V)
40
50
60
Max.
200
Fig. 39 : Maximum non repetitive surge RMS on state current versus overload duration (with 50Hz sinusoidal wave and initial junction temperature equal to 25C)
ITSM (A)
Fig. 40 : Maximum peak pulse current versus surge duration
Ipp (A)
100
10
1
t (s)
0.1
0.1
bs O
let o
ro P e
1 10
du
ct
100
(s)
so Ob 200 100 50 30 20 0.01 0.02
300
te le
ro P
uc d
s) t(
0.05
0.1
1000
0.2 0.5 t (ms)
1
2
5
10
16/21
CLP200M
SOLDERING RECOMMENDATION The soldering process causes considerable thermal stress to a semiconductor component. This has to be minimized to assure a reliable and extended lifetime of the device. The PowerSO-10TM package can be exposed to a maximum temperature of 260C for 10 seconds. However a proper soldering of the package could be done at 215C for 3 seconds. Any solder temperature profile should be within these limits. As reflow techniques are most common in surface mounting, typical heating profiles are given in Figure 1,either for mounting on FR4 or on metal-backed boards. For each particular board, the appropriate heat profile has to be adjusted experimentally. The present proposal is just a starting point. In any case, the following precautions have to be considered : - always preheat the device - peak temperature should be at least 30 C higher than the melting point of the solder alloy chosen - thermal capacity of the base substrate Voids pose a difficult reliability problem for large Fig 1 : Typical reflow soldering heat profile surface mount devices. Such voids under the package result in poor thermal contact and the high thermal resistance leads to component failures. The PowerSO-10 is designed from scratch to be solely a surface mount package, hence symmetry in the x- and y-axis gives the package excellent weight balance. Moreover, the PowerSO-10 offers the unique possibility to control easily the flatness and quality of the soldering process. Both the top and the bottom soldered edges of the package are accessible for visual inspection (soldering meniscus). Coplanarity between the substrate and the package can be easily verified. The quality of the solder joints is very important for two reasons : (I) poor quality solder joints result directly in poor reliability and (II) solder thickness affects the thermal resistance significantly. Thus a tight control of this parameter results in thermally efficient and reliable solder joints.
Temperature (o C)
250
245 C 215oC
o
200
Epoxy FR4 board
150
100
bs O
e l50 t o
0 0
Pr e
40
du o
(s) ct
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Soldering
Preheating
Cooling
Metal-backed board
80
120
160
200
240
280
320
360
Time (s)
17/21
CLP200M
SUBSTRATES AND MOUNTING INFORMATION The use of epoxy FR4 boards is quite common for surface mounting techniques, however, their poor thermal conduction compromises the otherwise outstanding thermal performance of the PowerSO-10. Some methods to overcome this limitation are discussed below. One possibility to improve the thermal conduction is the use of large heat spreader areas at the copper layer of the PC board. This leads to a reduction of thermal resistance to 35 C for 6 cm2 of the board heatsink (see fig. 2). Use of copper-filled through holes on conventional FR4 techniques will increase the metallization and decrease thermal resistance accordingly. Using a configuration with 16 holes under the spreader of the package with a pitch of 1.8 mm and a diameter of 0.7 mm, the thermal resistance (junction heatsink) can be reduced to 12C/W (see fig. 3). Beside the thermal advantage, this solution allows multi-layer boards to be used. However, a drawback of this traditional material prevent its use in very high power, high current circuits. For instance, it is not advisable to surface mount devices with currents greater than 10 A on FR4 boards. A Power Mosfet or Schottky diode in a surface mount power package can handle up to around 50 A if better substrates are used.
Fig 2 : Mounting on epoxy FR4 head dissipation by extending the area of the copper layer
Copper foil
FR4 board
Fig 3 : Mounting on epoxy FR4 by using copper-filled through holes for heat transfer
bs O
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Copper foil
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FR4 board
heatsink
heat transfer
18/21
CLP200M
A new technology available today is IMS - an Insulated Metallic Substrate. This offers greatly enhanced thermal characteristics for surface mount components. IMS is a substrate consisting of three different layers, (I) the base material which is available as an aluminium or a copper plate, (II) a thermal conductive dielectrical layer and (III) a copper foil, which can be etched as a circuit layer. Using this material a thermal resistance of 8C/W with 40 cm2 of board floating in air is achievable (see fig. 4). If even higher power is to be dissipated Fig 4 : Mounting on metal backed board an external heatsink could be applied which leads to an Rth(j-a) of 3.5C/W (see Fig. 5), assuming that Rth (heatsink-air) is equal to Rth (junction-heatsink). This is commonly applied in practice, leading to reasonable heatsink dimensions. Often power devices are defined by considering the maximum junction temperature of the device. In practice , however, this is far from being exploited. A summary of various power management capabilities is made in table 1 based on a reasonable delta T of 70C junction to air. Fig 5 : Mounting on metal backed board with an external heatsink applied
Copper foil
Copper foil Insulation
FR4 board
Aluminium
Aluminium heatsink
The PowerSO-10 concept also represents an attractive alternative to C.O.B. techniques. PowerSO-10 offers devices fully tested at low and high temperature. Mounting is simple - only conventional SMT is required - enabling the users to get rid of bond wire problems and the problem to
TABLE 1 : THERMAL IMPEDANCE VERSUS SUBSTRATE PowerSo-10 package mounted on 1.FR4 using the recommended pad-layout 2.FR4 with heatsink on board (6cm2)
3.FR4 with copper-filled through holes and external heatsink applied
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4. IMS floating in air (40 cm2) 5. IMS with external heatsink applied
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control the high temperature soft soldering as well. An optimized thermal management is guaranteed through PowerSO-10 as the power chips must in any case be mounted on heat spreaders before being mounted onto the substrate.
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Rth (j-a) 50 C/W 35 C/W 12 C/W 8 C/W 3.5 C/W
P Diss (*) 1.5 W 2.0 W 5.8 W 8.8 W 20 W
(*) Based on a delta T of 70 C junction train.
19/21
CLP200M
PACKAGE MECHANICAL DATA
B
0.10 A B
10 H E
6 E2 E3 E1
1
5
SEATING PLANE
e
0.25 M
B
DETAIL "A"
A C
h
D D1
Q
A F A1
E4
DIMENSIONS REF. A A1 B Millimeters 3.35 0.40 Min. Typ. Max.
bs O
C D E E1 E2 D1
let o
0.00 0.35 9.40 7.40 9.30 7.20 7.20
ro P e
0.10
Min. 0.00
du
(s) ct
Max. 0.143
Ob -
so
DETAIL "A"
te le
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A1 L
SEATING PLANE
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a
DIMENSIONS REF. E3 E4 e F H h L Q 1.20 1.70 1.25 13.8 0 0.50 1.80 0.0472 0.067 Millimeters Min. Typ. Max. 6.10 5.90 1.27 1.35 0.0492 14.4 0.543 0 0.019 0.0708 Min. 6.35 0.240 6.10 0.232 0.05 0.0531 0.567 Inches Typ. Max. 0.250 0.240
Inches Typ.
3.65 0.131 0.60 0.0157
0.0039 0.0236 0.0217 0.378 0.299 0.374 0.291 0.299
0.55 0.0137 9.60 0.370 7.60 0.291 9.50 0.366 7.40 0.283 7.60 0.283
MARKING Package Power SO-10
20/21
TM
Type CLP200M
Marking CLP200M
CLP200M
ORDER CODE
CLP
Current Limiting Protection
200
M
-TR
TR = tape & reel = tube Package: PowerSO-10
Minimum operation voltage
FOOT PRINT MOUNTING PAD LAYOUT RECOMMENDED HEADER SHAPE
0.54 - 0.60
1.27 0.67 - 0.73 9.5
SHIPPING TUBE
B
bs O
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
let o
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A
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ct
(s)
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14.6 - 14.9
10.8 - 11.0
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 21/21
6.30
Dimensions in millimeters DIMENSIONS (mm) TYP A B C Length tube Quantity per tube 18 12 0,8 532 50

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